Datasheet Details
| Part number | HYG023N03LR1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 903.06 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG023N03LR1D-HUAYI.pdf |
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Overview: HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature 30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.
| Part number | HYG023N03LR1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 903.06 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG023N03LR1D-HUAYI.pdf |
|
|
|
GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G023N03 XYWXXXXXX U G023N03 XYWXXXXXX V G023N03 XYWXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYWXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
| Part Number | Description |
|---|---|
| HYG023N03LR1C2 | N-Channel MOSFET |
| HYG023N03LR1U | N-Channel Enhancement Mode MOSFET |
| HYG023N03LR1V | N-Channel Enhancement Mode MOSFET |
| HYG023N04LQ1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04LQ1P | N-Channel Enhancement Mode MOSFET |
| HYG023N04LS1D | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1P | N-Channel Enhancement Mode MOSFET |
| HYG020N04NA1B | N-Channel Enhancement Mode MOSFET |
| HYG020N04NA1P | N-Channel Enhancement Mode MOSFET |