• Part: HYG023N03LR1D
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 903.06 KB
Download HYG023N03LR1D Datasheet PDF
HUAYI
HYG023N03LR1D
HYG023N03LR1D is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature - 30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications - Switching Application - Power Management for DC/DC - Battery Protection Ordering and Marking Information N-Channel MOSFET D G023N03 XYWXXXXXX U G023N03 XYWXXXXXX V G023N03 XYWXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYWXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. 1 V1.0 HYG023N03LR1D/U/V Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Junction Temperature...