The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HYG023N03LR1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS
GDS
GDS
TO-252-2L TO-251-3L
TO-251-3S
Applications
Switching Application Power Management for DC/DC Battery Protection
Ordering and Marking Information
N-Channel MOSFET
D G023N03
XYWXXXXXX
U G023N03
XYWXXXXXX
V G023N03
XYWXXXXXX
Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code XYWXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
HYG023N03LR1D Datasheet
