HYG023N03LR1V datasheet by HUAYI.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HYG023N03LR1V |
|---|---|
| Datasheet | HYG023N03LR1V HYG023N03LR1D Datasheet (PDF) |
| File Size | 903.06 KB |
| Manufacturer | HUAYI |
| Description | N-Channel Enhancement Mode MOSFET |
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TO-251-3L V:TO-251-3S Date Code XYWXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully pliant with RoHS.
| Part Number | Description |
|---|---|
| HYG023N03LR1C2 | N-Channel MOSFET |
| HYG023N03LR1D | N-Channel Enhancement Mode MOSFET |
| HYG023N03LR1U | N-Channel Enhancement Mode MOSFET |
| HYG023N04LQ1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04LQ1P | N-Channel Enhancement Mode MOSFET |
| HYG023N04LS1D | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1P | N-Channel Enhancement Mode MOSFET |
| HYG020N04NA1B | N-Channel Enhancement Mode MOSFET |
| HYG020N04NA1P | N-Channel Enhancement Mode MOSFET |
