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HYG023N03LR1V - N-Channel Enhancement Mode MOSFET

Download the HYG023N03LR1V datasheet PDF. This datasheet also covers the HYG023N03LR1D variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G023N03 XYWXXXXXX U G023N03 XYWXXXXXX V G023N03 XYWXXXXXX Package Code D: TO-252-2L U: TO-251-3

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Note: The manufacturer provides a single datasheet file (HYG023N03LR1D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG023N03LR1V
Manufacturer HUAYI
File Size 903.06 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG023N03LR1V Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G023N03 XYWXXXXXX U G023N03 XYWXXXXXX V G023N03 XYWXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYWXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.