HYG023N03LR1V Description
TO-251-3L V:TO-251-3S Date Code XYWXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully pliant with RoHS.
HYG023N03LR1V is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
| Part Number | Description |
|---|---|
| HYG023N03LR1C2 | N-Channel MOSFET |
| HYG023N03LR1D | N-Channel Enhancement Mode MOSFET |
| HYG023N03LR1U | N-Channel Enhancement Mode MOSFET |
| HYG023N04LQ1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04LQ1P | N-Channel Enhancement Mode MOSFET |
TO-251-3L V:TO-251-3S Date Code XYWXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully pliant with RoHS.