HYG023N04LQ1P - N-Channel Enhancement Mode MOSFET

HUAYI

General Description

TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G023N04 XYMXXXXXX B G023N04 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation fi

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HYG023N04LQ1P n-channel enhancement mode mosfet by HUAYI - Datasheet Preview

Datasheet Details

Part number	HYG023N04LQ1P
Manufacturer	HUAYI
File Size	1.27 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HYG023N04LQ1P Datasheet

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HYG023N04LQ1P/B N-Channel Enhancement Mode MOSFET Feature  40V/170A RDS(ON)= 2.3 mΩ(typ.) @VGS = 10V RDS(ON)= 3.0mΩ(typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Switching application  Li-battery protection Pin Description TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G023N04 XYMXXXXXX B G023N04 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.