Datasheet Details
| Part number | HYG110N03LR1S |
|---|---|
| Manufacturer | HUAYI |
| File Size | 863.43 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 HYG110N03LR1S Datasheet
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| Part number | HYG110N03LR1S |
|---|---|
| Manufacturer | HUAYI |
| File Size | 863.43 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
HYG110N03LR1S Datasheet
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SOP8L Applications z Power Management for DC/DC z Switching Application z Battery Protection Ordering and Marking Information S G110N03 XYMXXXXXX N-Channel MOSFET Package Code S: SOP8L Date Code XYMXXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
www.hymexa.com 1 V1.0 HYG110N03LR1S Absolute Maximum Ratings Symbol Parameter Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Junction Temperature Range TSTG Storage Temperature Range IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RTJA Thermal Resistance, Junction-to-Ambient EAS SinglePulsed-Avalanche Energy ** Tc=25°C Tc=25°C Tc=25°C Tc=100°C Tc=25°C Tc=100°C L=0.3mH Note: * Repetitive rating˗pulse width limited by max.junction temperature.
HYG110N03LR1S N-Channel Enhancement Mode MOSFET Feature z 30V/10A RDS(ON)=8.5mΩ(typ.) @VGS = 10V RDS(ON)=12.5 mΩ(typ.) @VGS = 4.
| Part Number | Description |
|---|---|
| HYG110N11LS1C2 | N-Channel Enhancement Mode MOSFET |
| HYG110P04LQ1C2 | Single P-Channel Enhancement Mode MOSFET |
| HYG110P04LQ1D | P-Channel MOSFET |
| HYG110P04LQ1U | P-Channel MOSFET |
| HYG110P04LQ1V | P-Channel MOSFET |
| HYG110P04LQ2C2 | P-Channel Enhancement Mode MOSFET |
| HYG110P04LQ2D | N-Channel Enhancement Mode MOSFET |
| HYG110P04LQ2U | N-Channel Enhancement Mode MOSFET |
| HYG110P04LQ2V | N-Channel Enhancement Mode MOSFET |
| HYG120P06LR1D | P-Channel Enhancement Mode MOSFET |