HYG110N03LR1S
HYG110N03LR1S is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature z 30V/10A RDS(ON)=8.5mΩ(typ.) @VGS = 10V RDS(ON)=12.5 mΩ(typ.) @VGS = 4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available
(Ro HS pliant)
Pin Description
SOP8L
Applications z Power Management for DC/DC z Switching Application z Battery Protection
Ordering and Marking Information
G110N03
XYMXXXXXX
N-Channel MOSFET
Package Code S: SOP8L Date Code XYMXXXXXX
Note:HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nationfinish;which are fully pliant with Ro HS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
.hymexa. 1
V1.0
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Junction Temperature Range
TSTG
Storage Temperature Range
Source Current-Continuous(Body Diode)
Mounted on Large Heat Sink
Pulsed Drain Current
- ID
Continuous Drain Current
Maximum Power Dissipation
RTJA
Thermal Resistance, Junction-to-Ambient
Single Pulsed-Avalanche Energy
- -...
