HYG110N11LS1C2
HYG110N11LS1C2 is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature
- 115V/60A RDS(ON)= 9.8 mΩ (typ.) @ VGS = 10V RDS(ON)= 14.5 mΩ (typ.) @ VGS = 4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen- Free Devices Available
(Ro HS pliant)
Pin Description
DDDD
DDDD
SSSG
GSSS
Pin1
PDFN8L（5x6）
Applications
- DC-DC Power Management
- Quick Charger Applications
- LED Lighting Applications
Ordering and Marking Information
Single N-Channel MOSFET
C2
G110N11
XYMXXXXXX
Package Code C2: PDFN8L（5x6）
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
.hymexa. 1
V1.0
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Maximum Junction Temperature
TSTG
Storage Temperature...
