Datasheet Details
| Part number | HYG110N11LS1C2 |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.45 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 HYG110N11LS1C2 Datasheet
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| Part number | HYG110N11LS1C2 |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.45 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
HYG110N11LS1C2 Datasheet
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DDDD DDDD SSSG GSSS Pin1 PDFN8L（5x6） Applications DC-DC Power Management Quick Charger Applications LED Lighting Applications Ordering and Marking Information Single N-Channel MOSFET C2 G110N11 XYMXXXXXX Package Code C2: PDFN8L（5x6） Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HYG110N11LS1C2 Single N-Channel Enhancement Mode MOSFET Feature 115V/60A RDS(ON)= 9.8 mΩ (typ.) @ VGS = 10V RDS(ON)= 14.5 mΩ (typ.) @ VGS = 4.
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|---|---|
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| HYG110P04LQ1V | P-Channel MOSFET |
| HYG110P04LQ2C2 | P-Channel Enhancement Mode MOSFET |
| HYG110P04LQ2D | N-Channel Enhancement Mode MOSFET |
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| HYG120P06LR1D | P-Channel Enhancement Mode MOSFET |