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HYG800P10LR1D - P-Channel MOSFET

General Description

TO-252-2L TO-251-3L TO-251-3S Applications

Power Management in DC/DC converter.

Load switching.

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Datasheet Details

Part number HYG800P10LR1D
Manufacturer HUAYI
File Size 1.44 MB
Description P-Channel MOSFET
Datasheet download datasheet HYG800P10LR1D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-20A RDS(ON)= 77mΩ(typ.) @ VGS = -10V RDS(ON)= 86mΩ(typ.) @ VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.  Load switching. Ordering and Marking Information D G800P10 XYMXXXXXX U G800P10 XYMXXXXXX V G800P10 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX P-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.