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HYG800P10LR1S - P-Channel Enhancement Mode MOSFET

General Description

SOP-8L Applications Power Management for DC/DC

Load switching.

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Datasheet Details

Part number HYG800P10LR1S
Manufacturer HUAYI
File Size 1.62 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG800P10LR1S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG800P10LR1S Feature  -100V/-8A RDS(ON)= 72 mΩ (typ.) @ VGS = -10V RDS(ON)= 80 mΩ (typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) P-Channel Enhancement Mode MOSFET Pin Description SOP-8L Applications  Power Management for DC/DC  Load switching. Ordering and Marking Information P-Channel MOSFET S G800P10 XYMXXXXXX Package Code S: SOP-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.