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HYG800P10LR1V - P-Channel MOSFET

Download the HYG800P10LR1V datasheet PDF. This datasheet also covers the HYG800P10LR1D variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-252-2L TO-251-3L TO-251-3S Applications

Power Management in DC/DC converter.

Load switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYG800P10LR1D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG800P10LR1V
Manufacturer HUAYI
File Size 1.44 MB
Description P-Channel MOSFET
Datasheet download datasheet HYG800P10LR1V Datasheet

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Other Datasheets by HUAYI

Part Number Description
HYG800P10LR1D P-Channel MOSFET
HYG800P10LR1S P-Channel Enhancement Mode MOSFET
HYG800P10LR1U P-Channel MOSFET
HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET
HYG006N04LS1TA N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-20A RDS(ON)= 77mΩ(typ.) @ VGS = -10V RDS(ON)= 86mΩ(typ.) @ VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.  Load switching. Ordering and Marking Information D G800P10 XYMXXXXXX U G800P10 XYMXXXXXX V G800P10 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX P-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.