HVV1214-100 - Power Transistor

General Description

The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz.

Key Features

Silicon MOSFET Technology.
Operation from 24V to 50V.
High Power Gain.
Extreme Ruggedness.
Internal Input and Output Matching.
Excellent Thermal Stability.
All Gold Bonding Scheme.

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HVV1214-100 power transistor by HVVi - Datasheet Preview

Datasheet Details

Part number	HVV1214-100
Manufacturer	HVVi
File Size	726.92 KB
Description	Power Transistor
Datasheet	HVV1214-100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.