Datasheet Details
| Part number | HVV1214-100 |
|---|---|
| Manufacturer | HVVi |
| File Size | 726.92 KB |
| Description | Power Transistor |
| Datasheet | HVV1214-100-HVVi.pdf |
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Overview: The innovative Semiconductor pany! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar.
| Part number | HVV1214-100 |
|---|---|
| Manufacturer | HVVi |
| File Size | 726.92 KB |
| Description | Power Transistor |
| Datasheet | HVV1214-100-HVVi.pdf |
|
|
|
The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz.
The high voltage HVVFET™ technology produces over 100W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50V supply.
The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
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