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HMS1M32M8S - High-Speed SRAM MODULE 4Mbyte

General Description

The HMS1M32M8S is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration.

The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, doublesided, FR4-printed circuit board.

Key Features

  • Part identification - HMS1M32M8S : SIMM design - HMS1M32Z8S : ZIP design Pin-Compatible with the HMS1M32M8S Vss A3 A2 A1 A0 Vcc A11 /OE A10 Vcc /CE_LL2 /CE_LL1 DQ7 DQ0 DQ1 DQ2 DQ6 DQ5 DQ4 DQ3 A15 A17 /WE A13 Vcc DQ8 DQ9 DQ10 /CE_LM2 Vcc /CE_LM1 DQ15 DQ14 DQ13 DQ12 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 PIN.

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Datasheet Details

Part number HMS1M32M8S
Manufacturer Hanbit Electronics
File Size 96.46 KB
Description High-Speed SRAM MODULE 4Mbyte
Datasheet download datasheet HMS1M32M8S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HANBit HMS1M32M8S HAN BIT High-Speed SRAM MODULE 4Mbyte(1M x 32-Bit) Part No. HMS1M32M8S, HMS1M32Z8S GENERAL DESCRIPTION The HMS1M32M8S is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, doublesided, FR4-printed circuit board. The HMS1M32M8S also support low data retention voltage for battery back-up operations with low data retention current. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable(/WE) can set the memory input and output.