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MSA-1000 - Cascadable Silicon Bipolar MMIC Amplifier

Download the MSA-1000 datasheet PDF. This datasheet also covers the MSA-1000_Hewlett variant, as both devices belong to the same cascadable silicon bipolar mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The MSA-1000 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip.

This MMIC is designed for use in a push-pull configuration in a 25␣ Ω system.

Key Features

  • High Output Power: +27 dBm Typical P1dB at 1.0␣ GHz.
  • Low Distortion: 37 dBm Typical IP3 at 1.0␣ GHz.
  • 8.5 dB Typical Gain at 1.0␣ GHz.
  • Impedance Matched to 25 Ω for Push-Pull Configurations amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliab.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSA-1000_Hewlett-Packard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MSA-1000
Manufacturer Hewlett-Packard
File Size 73.59 KB
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA-1000 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1000 Features • High Output Power: +27 dBm Typical P1dB at 1.0␣ GHz • Low Distortion: 37 dBm Typical IP3 at 1.0␣ GHz • 8.5 dB Typical Gain at 1.0␣ GHz • Impedance Matched to 25 Ω for Push-Pull Configurations amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.