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HBC546 Datasheet NPN Epitaxial Planar Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HBC546
Manufacturer Hi-Sincerity Mocroelectronics
File Size 48.01 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet HBC546 HBC546_Hi Datasheet (PDF)

General Description

The HBC546 is primarily intended for use in driver stage of audio amplifiers.

Key Features

  • High Breakdown Voltage: 65V.
  • High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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