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HBC546 - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

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HBC546 NPN EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – HBC546

Datasheet Details

Part number	HBC546
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	48.01 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HBC546 Datasheet
Note	This datasheet PDF includes multiple part numbers: HBC546, HBC546_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HBC546 datasheet.

Product details

Description

The HBC546 is primarily intended for use in driver stage of audio amplifiers.

Features

High Breakdown Voltage: 65V.
High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Published: Mar 23, 2005 |