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HBC546 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBC546 datasheet PDF. This datasheet also covers the HBC546_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HBC546 is primarily intended for use in driver stage of audio amplifiers.

Key Features

  • High Breakdown Voltage: 65V.
  • High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBC546_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC546
Manufacturer Hi-Sincerity Mocroelectronics
File Size 48.01 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC546 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/4 Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. Features • High Breakdown Voltage: 65V • High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .............................