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HBC548 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBC548 datasheet PDF. This datasheet also covers the HBC548_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HBC548 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation

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Note: The manufacturer provides a single datasheet file (HBC548_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC548
Manufacturer Hi-Sincerity Mocroelectronics
File Size 45.87 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC548 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HBC548 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HA200103 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Page No. : 1/4 Description The HBC548 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature.......................................................................................................................... -55 to +150 °C Junction Temperature.................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C)....................................................