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HBC547 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC547, a member of the HBC547_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

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HBC547 NPN EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – HBC547

Datasheet Details

Part number	HBC547
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	50.33 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HBC547 Datasheet
Additional preview pages of the HBC547 datasheet.

HBC547 Product details

Description

The HBC547 is designed for use in driver stage of audio amplifier.

Features

High Breakdown Voltage: 45V.
High DC Current Gain: 110-800 at IC=2mA TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Published: Mar 23, 2005 |