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HBC547 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBC547 datasheet PDF. This datasheet also covers the HBC547_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HBC547 is designed for use in driver stage of audio amplifier.

Key Features

  • High Breakdown Voltage: 45V.
  • High DC Current Gain: 110-800 at IC=2mA TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBC547_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC547
Manufacturer Hi-Sincerity Mocroelectronics
File Size 50.33 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC547 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HBC546 NPN EPITAXIAL PLANAR TRANSISTOR
HBC548 NPN EPITAXIAL PLANAR TRANSISTOR
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HBC557 PNP EPITAXIAL PLANAR TRANSISTOR
HBC558 PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HBC547 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6418 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/5 Description The HBC547 is designed for use in driver stage of audio amplifier. Features • High Breakdown Voltage: 45V • High DC Current Gain: 110-800 at IC=2mA TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................