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HBC547 Datasheet NPN Epitaxial Planar Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. HBC547 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6418 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HBC547
Manufacturer Hi-Sincerity Mocroelectronics
File Size 50.33 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet HBC547 HBC547_Hi Datasheet (PDF)

General Description

The HBC547 is designed for use in driver stage of audio amplifier.

Key Features

  • High Breakdown Voltage: 45V.
  • High DC Current Gain: 110-800 at IC=2mA TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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