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HBC557 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC557, a member of the HBC557_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

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HBC557 PNP EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – HBC557

Datasheet Details

Part number	HBC557
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	46.91 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HBC557 Datasheet
Additional preview pages of the HBC557 datasheet.

HBC557 Product details

Description

The HBC557 is designed for use in driver stage of audio amplifier applications.

Features

High Breakdown Voltage: 45V.
High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Published: Mar 23, 2005 |