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HBC557 Datasheet PNP Epitaxial Planar Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. HBC557 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6423 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HBC557
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.91 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet HBC557 HBC557_Hi Datasheet (PDF)

General Description

The HBC557 is designed for use in driver stage of audio amplifier applications.

Key Features

  • High Breakdown Voltage: 45V.
  • High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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