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HBC556 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HBC556 datasheet PDF. This datasheet also covers the HBC556_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HBC556 is primarily intended for use in driver stage of audio amplifiers.

Key Features

  • High Breakdown Voltage: 65V at IC=1mA.
  • High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBC556_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC556
Manufacturer Hi-Sincerity Mocroelectronics
File Size 47.06 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC556 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HBC557 PNP EPITAXIAL PLANAR TRANSISTOR
HBC558 PNP EPITAXIAL PLANAR TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/4 Description The HBC556 is primarily intended for use in driver stage of audio amplifiers. Features • High Breakdown Voltage: 65V at IC=1mA • High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..............