• Part: HBC556
  • Description: PNP EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 47.06 KB
Download HBC556 Datasheet PDF
Hi-Sincerity Mocroelectronics
HBC556
Description The HBC556 is primarily intended for use in driver stage of audio amplifiers. Features - High Breakdown Voltage: 65V at IC=1m A - High AC Current Gain: 75-500 at IC=2m A,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 m W - Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage...