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HBC556 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC556, a member of the HBC556_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

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HBC556 PNP EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – HBC556

Datasheet Details

Part number	HBC556
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	47.06 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HBC556 Datasheet
Additional preview pages of the HBC556 datasheet.

HBC556 Product details

Description

The HBC556 is primarily intended for use in driver stage of audio amplifiers.

Features

High Breakdown Voltage: 65V at IC=1mA.
High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Published: Mar 23, 2005 |