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HBC556 Datasheet PNP Epitaxial Planar Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HBC556
Manufacturer Hi-Sincerity Mocroelectronics
File Size 47.06 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet HBC556 HBC556_Hi Datasheet (PDF)

General Description

The HBC556 is primarily intended for use in driver stage of audio amplifiers.

Key Features

  • High Breakdown Voltage: 65V at IC=1mA.
  • High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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