Download the HBC558 datasheet PDF. This datasheet also covers the HBC558_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation
| Part number | HBC558 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 45.48 KB |
| Description | PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HBC558 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HBC517 | NPN EPITAXIAL PLANAR TRANSISTOR | HI-SINCERITY |
| HBC114ES6R | Dual NPN Digital Transistor | CYStech Electronics |
| HBC114TS6R | Dual NPN Digital Transistor | CYStech Electronics |
| HBC114YC6 | Dual NPN Digital Transistors | CYStech Electronics |
| HBC114YS5 | Dual NPN Digital Transistors | CYStech Electronics |
| Part Number | Description |
|---|---|
| HBC556 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HBC557 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HBC546 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HBC547 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HBC548 | NPN EPITAXIAL PLANAR TRANSISTOR |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
