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HBD438T - COMPLEMENTARY SILICON POWER TRANSISTORS

This page provides the datasheet information for the HBD438T, a member of the HBD438T_Hi COMPLEMENTARY SILICON POWER TRANSISTORS family.

Datasheet Summary

Description

The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications.

The complementary NPN type is HBD437T.

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Datasheet preview – HBD438T

Datasheet Details

Part number HBD438T
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.49 KB
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet download datasheet HBD438T Datasheet
Additional preview pages of the HBD438T datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200206 Issued Date : 2001.04.01 Revised Date : 2002.02.08 Page No. : 1/3 HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary NPN type is HBD437T. Absolute Maximum Ratings (Ta=25°C) Symbol VCBO VCES VCEO VEBO IC ICM IB PD Tstg Tj Parametor Collector-Base Voltage (IE=0) Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (t≤10ms) Base Current Total Dissipation at Tc=25°C Ta=25°C Storage Temperature Max.
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