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HBD438T - COMPLEMENTARY SILICON POWER TRANSISTORS

Download the HBD438T datasheet PDF. This datasheet also covers the HBD438T_Hi variant, as both devices belong to the same complementary silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications.

The complementary NPN type is HBD437T.

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Note: The manufacturer provides a single datasheet file (HBD438T_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBD438T
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.49 KB
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet download datasheet HBD438T Datasheet

Full PDF Text Transcription for HBD438T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HBD438T. For precise diagrams, and layout, please refer to the original PDF.

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200206 Issued Date : 2001.04.01 Revised Date : 2002.02.08 Page No. : 1/3 HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS...

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2.02.08 Page No. : 1/3 HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary NPN type is HBD437T. Absolute Maximum Ratings (Ta=25°C) Symbol VCBO VCES VCEO VEBO IC ICM IB PD Tstg Tj Parametor Collector-Base Voltage (IE=0) Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (t≤10ms) Base Current Total Dissipation at Tc=25°C Ta=25°C Storage Temperature Max.