Datasheet4U Logo Datasheet4U.com

HBD438T Datasheet Complementary Silicon Power Transistors

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200206 Issued Date : 2001.04.01 Revised Date : 2002.02.08 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HBD438T
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.49 KB
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet HBD438T HBD438T_Hi Datasheet (PDF)

General Description

The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications.

The complementary NPN type is HBD437T.

Absolute Maximum Ratings (Ta=25°C) Symbol VCBO VCES VCEO VEBO IC ICM IB PD Tstg Tj Parametor Collector-Base Voltage (IE=0) Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (t≤10ms) Base Current Total Dissipation at Tc=25°C Ta=25°C Storage Temperature Max.

HBD438T Distributor