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HBF423 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HBF423 datasheet PDF. This datasheet also covers the HBF423_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Spec.

No.

: HE6403-B Issued Date : 1993.03.18 Revised Date : 2000.09.20 Page No.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Tot

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Note: The manufacturer provides a single datasheet file (HBF423_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBF423
Manufacturer Hi-Sincerity Mocroelectronics
File Size 33.05 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBF423 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HBF423 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers Spec. No. : HE6403-B Issued Date : 1993.03.18 Revised Date : 2000.09.20 Page No. : 1/3 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 830 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...............................................................
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