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HBF4522D - NPN TRIPLE DIFFUSION PLANAR TRANSISTOR

Download the HBF4522D datasheet PDF. This datasheet also covers the HBF4522D_Hi variant, as both devices belong to the same npn triple diffusion planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

HBF4522D is designed for use in the monitor dynamic focus circuit.

It can be used up to 19" monitor with working frequency as high as 100KHz.

Features

  • High Breakdown Voltage.
  • Low C-E Saturation Voltage.
  • High Cutoff Frequency.
  • High Current Gain TO-126ML Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.5 W Total Power Dissipation (Tc=25°C) 20 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage 550 V BVCEO Collector to Emitter Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBF4522D_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBF4522D
Manufacturer Hi-Sincerity Mocroelectronics
File Size 32.18 KB
Description NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Datasheet download datasheet HBF4522D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2002.02.20 Page No. : 1/3 HBF4522D NPN TRIPLE DIFFUSION PLANAR TRANSISTOR Description HBF4522D is designed for use in the monitor dynamic focus circuit. It can be used up to 19" monitor with working frequency as high as 100KHz. Features • High Breakdown Voltage • Low C-E Saturation Voltage • High Cutoff Frequency • High Current Gain TO-126ML Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ....................................................................................................
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