HI3669 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HI3669, a member of the HI3669-Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HI3669
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	43.90 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HI3669 Datasheet
Additional preview pages of the HI3669 datasheet.

The HI3669 is designed for using in power amplifier applications, power switching application.

Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipa

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Published: Apr 30, 2019 |