Datasheet Details
| Part number | HI3669 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 43.90 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet | HI3669 HI3669-Hi Datasheet (PDF) |
|
|
Overview: HI-SINCERITY MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2006.02.20 Page No.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HI3669 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 43.90 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet | HI3669 HI3669-Hi Datasheet (PDF) |
|
|
|
The HI3669 is designed for using in power amplifier applications, power switching application.
Absolute Maximum Ratings (TA=25°C) TO-251 • Maximum Temperatures Tstg Storage Temperature....................................................................................................................
-55 ~ +150 °C Tj Junction Temperature ................................................................................................................................
| Part Number | Description |
|---|---|
| HI31C | NPN EPITAXIAL PLANAR TRANSISTOR |
| HI32C | PNP EPITAXIAL PLANAR TRANSISTOR |