HI3669 - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HI3669
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	43.90 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HI3669 Datasheet
Note	This datasheet PDF includes multiple part numbers: HI3669, HI3669-Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HI3669 datasheet.

Product details

Description

The HI3669 is designed for using in power amplifier applications, power switching application. Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.25 W Maximum Voltages and Currents BVCBO Collector to Base Breakdown Voltage 80 V BVCEO Collector to Emitter Breakdown Voltage 80 V BVEBO Emitter to Base Emitter Breakdown

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Published: Apr 30, 2019 |