HI3669 Datasheet | Hi-Sincerity Mocroelectronics

Description The HI3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-251 - Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C - Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.25 W - Maximum Voltages and Currents BVCBO Collector to Base Breakdown Voltage 80 V BVCEO Collector to Emitter Breakdown Voltage 80 V BVEBO Emitter to Base Emitter Breakdown Voltage 5 V IC Collector Current (DC) 2 A Electrical Characteristics (TA=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) - h FE f T Cob Ton Tstg Tf Min. Typ. Max. - - - - - - - - - - - 0.15 - 0.9 - - - 100 - - - - - - -...