Download the HJ112 datasheet PDF. This datasheet also covers the HJ112_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
The HJ112 is designed for use in general purpose amplifier and low-speed switching applications.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissi
| Part number | HJ112 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 104.24 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HJ112 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HJ11867 | Three-channel fluxgate signal processing IC | ETC |
| HJ12003 | Power Divider | Signal |
| HJ13002 | NPN Epitaxial Silicon Transistor | Hefei Hejing |
| HJ1602A | Dot Matrix LCD | Ovation |
| Part Number | Description |
|---|---|
| HJ1109 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HJ117 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HJ10387 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HJ122 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HJ127 | PNP EPITAXIAL PLANAR TRANSISTOR |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
