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HJ112 - NPN EPITAXIAL PLANAR TRANSISTOR

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Datasheet preview – HJ112

Datasheet Details

Part number HJ112
Manufacturer Hi-Sincerity Mocroelectronics
File Size 104.24 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ112 Datasheet
Note This datasheet PDF includes multiple part numbers: HJ112, HJ112_Hi.
Please refer to the document for exact specifications by model.
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Description

The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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