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HJ117 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HJ117 datasheet PDF. This datasheet also covers the HJ117_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HJ117 is designed for use in general purpose amplifier and low-speed switching applications.

Maximum Temperatures B Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum R1 R2 E Maxim

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Note: The manufacturer provides a single datasheet file (HJ117_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HJ117
Manufacturer Hi-Sincerity Mocroelectronics
File Size 90.97 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ117 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HJ117 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6031 Issued Date : 1998.02.01 Revised Date : 2008.04.09 Page No. : 1/4 Description TO-252 The HJ117 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures B Storage Temperature .................................................................. -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ....................................................................................................................