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HMBT9014 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HMBT9014, a member of the HMBT9014_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HMBT9014 is designed for use in pre-amplifier of low level and low noise.

Features

  • High Total Power Dissipation (PD: 225mW).
  • Complementary to HMBT9015.
  • High hFE and Good Linearity SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW www. DataSheet4U. com.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage 50 V VCEO Collector to Emitter Voltage 45 V VEBO Emitte.

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Datasheet preview – HMBT9014

Datasheet Details

Part number HMBT9014
Manufacturer Hi-Sincerity Mocroelectronics
File Size 76.66 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMBT9014 Datasheet
Additional preview pages of the HMBT9014 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 1/5 HMBT9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT9014 is designed for use in pre-amplifier of low level and low noise. Features • High Total Power Dissipation (PD: 225mW) • Complementary to HMBT9015 • High hFE and Good Linearity SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..
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