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HMBT9014 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HMBT9014 datasheet PDF. This datasheet also covers the HMBT9014_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMBT9014 is designed for use in pre-amplifier of low level and low noise.

Key Features

  • High Total Power Dissipation (PD: 225mW).
  • Complementary to HMBT9015.
  • High hFE and Good Linearity SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW www. DataSheet4U. com.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage 50 V VCEO Collector to Emitter Voltage 45 V VEBO Emitte.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT9014_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT9014
Manufacturer Hi-Sincerity Mocroelectronics
File Size 76.66 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMBT9014 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 1/5 HMBT9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT9014 is designed for use in pre-amplifier of low level and low noise. Features • High Total Power Dissipation (PD: 225mW) • Complementary to HMBT9015 • High hFE and Good Linearity SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..