Download 2SD1559 Datasheet PDF
Hitachi Semiconductor
2SD1559
Silicon NPN Triple Diffused Application Low frequency power amplifier plementary pair with 2SB1079 Outline TO-3P 1 1. Base 2. Collector (Flange) 3. Emitter 3 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC - Tj Tstg Ratings 100 100 7 20 30 3 100 150 - 55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 100 100 100 7 - - 1000 - - - - - - - Typ - - - - - - - - - - - 1.0 9.0 3.0 Max - - - - 100 1.0 20000 2.0 2.5 3.0 3.5 - - - V V V V µs µs µs I C = 10 A, IB1 = - IB2 = 20 m A I C = 20 A, IB = 200 m A- 1 Unit V V V V µA m A Test conditions I C = 0.1 m A, IE = 0 I C = 25 m A, RBE = ∞ I C = 200...