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2SD2423 - Silicon NPN Transistor

Key Features

  • The transistor with a built-in zener diode of surge absorb. Outline UPAK 1 3 2 1 2, 4 ID 2 kΩ (Typ) 0.5 Ω (Typ) 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD2423 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: Symbol VCBO VCEO VEBO IC PC.
  • Tj Tstg ID 1 Ratings 50.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 1 3 2 1 2, 4 ID 2 kΩ (Typ) 0.5 Ω (Typ) 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD2423 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: Symbol VCBO VCEO VEBO IC PC * Tj Tstg ID 1 Ratings 50 50 7 1.5 1 150 –55 to +150 1.5 Unit V V V A W °C °C A 1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).