2SD2491 Datasheet | Hitachi Semiconductor

Features - Isolated package TO-126FM Outline TO-126FM 1. Emitter 2. Collector 3. Base 2SD2491, 2SD2492 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC PC PC - Tj Tstg 2SD2491 160 160 5 100 1.35 8 150 - 55 to +150 2SD2492 200 200 5 100 1.35 8 150 - 55 to +150 Unit V V V m A W W °C °C Electrical Characteristics (Ta = 25°C) 2SD2491 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2SD2492 Max - - - 10 - 320 - 1.5 2 - - Min 200 200 5 - - 60 30 - - - - Typ - - - - - - - - - 140 3.8 Max - - - - 10 320 - 1.5 2 - - V V MHz p F Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 m A VCE = 5 V, IC = 1 m A VCE = 5 V, IC = 10 m A I C = 30 m A, IB = 3 m A VCE = 5 V, IC = 10 m A VCB = 10 V, IE = 0 f = 1 MHz Min 160 160...