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2SD2485 - Silicon NPN Epitaxial Transistor

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Hitachi Semiconductor

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2SD2485 Silicon NPN Epitaxial Transistor by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – 2SD2485

Datasheet Details

Part number	2SD2485
Manufacturer	Hitachi Semiconductor
File Size	55.49 KB
Description	Silicon NPN Epitaxial Transistor
Datasheet	2SD2485 Datasheet
Additional preview pages of the 2SD2485 datasheet.

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Features

Low saturation voltage VCE(sat) = 0.1 V typ. (at IC = 1 A, IB = 50 mA).
Large current capacitance IC = 2 A 1. Emitter 2. Collector 3. Base 3 2 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current www. DataSheet4U. com Collector peak current Symbol VCBO VCEO VEBO IC ic(peak).
PC Tj Tstg Ratings 80 80 6 2 3 0.9 150.
55 to +150 Unit V V V A A W °C °C.

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Published: Nov 8, 2009 |