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2SH27 - N-Channel MOSFET

Key Features

  • High speed switching.
  • Low on-voltage Outline TO.
  • 220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH27 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 15 30 50 150.
  • 55 to +150 Unit V V A A W °C °C Electrica.

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📁 Similar Datasheet

Part Number Description Manufacturer
2SH20 SILICON P EMITTER PLANAR TYPE TRANSISTOR Toshiba
2SH21 SILICON P EMITTER PLANAR TYPE TRANSISTOR Toshiba

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SH20 Silicon N-Channel IGBT
2SH21 N-Channel MOSFET
2SH22 N-Channel MOSFET
2SH26 N-Channel MOSFET
2SH28 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SH27 Silicon N Channel IGBT High Speed Power Switching ADE-208-789A(Z) 2nd. Edition May 1999 Features • High speed switching • Low on-voltage Outline TO–220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH27 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 15 30 50 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — — 6.0 — — — — — — Typ — — — 2.1 920 150 220 300 410 Max 100 ±1 8.0 2.