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2SH27 Datasheet N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SH27 Silicon N Channel IGBT High Speed Power Switching ADE-208-789A(Z) 2nd.

Key Features

  • High speed switching.
  • Low on-voltage Outline TO.
  • 220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH27 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 15 30 50 150.
  • 55 to +150 Unit V V A A W °C °C Electrica.

More Datasheets from Hitachi Semiconductor (now Renesas)

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2SH13 Silicon N-Channel IGBT
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