Datasheet4U Logo Datasheet4U.com

2SH29 Datasheet N-Channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview

2SH29 Silicon N Channel IGBT High Speed Power Switching ADE-208-791A(Z) 2nd.

Key Features

  • High speed switching.
  • Low on-voltage Outline TO.
  • 220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH29 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 30 60 75 150.
  • 55 to +150 Unit V V A A W °C °C Electrica.