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2SJ181 - Silicon P-Channel MOS FET

Download the 2SJ181 datasheet PDF. This datasheet also covers the 2SJ182 variant, as both devices belong to the same silicon p-channel mos fet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www. DataSheet4U. com 2SJ181(L), 2SJ181(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SJ182_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ181 Silicon P-Channel MOSFET Renesas
2SJ181L Silicon P-Channel MOSFET Renesas
2SJ181S Silicon P-Channel MOSFET Renesas
2SJ180 P-Channel MOSFET NEC
2SJ184 P-Channel MOSFET NEC

Other Datasheets by

Part Number Description
2SJ181 P-Channel MOSFET
2SJ181L P-Channel MOSFET
2SJ181S P-Channel MOSFET
2SJ182 Silicon P-Channel MOS FET
2SJ186 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) 2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www.DataSheet4U.com 2SJ181(L), 2SJ181(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –600 ±15 –0.5 –1.0 –0.
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