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2SJ181 - Silicon P-Channel MOSFET

General Description

High speed power switching Preliminary Datasheet R07DS0395EJ0300 (Previous: REJ03G0848-0200) Rev.3.00 May 16, 2011

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switching regulator and DC-DC converter Outline.

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Datasheet Details

Part number 2SJ181
Manufacturer Renesas
File Size 103.29 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet 2SJ181 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET Description High speed power switching Preliminary Datasheet R07DS0395EJ0300 (Previous: REJ03G0848-0200) Rev.3.00 May 16, 2011 Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.