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2SJ181(L), 2SJ181(S)
Silicon P Channel MOS FET
Description
High speed power switching
Preliminary Datasheet
R07DS0395EJ0300 (Previous: REJ03G0848-0200)
Rev.3.00 May 16, 2011
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) )
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4 D
123
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2.