2SJ479 Overview
2SJ479(L), 2SJ479(S) Silicon P Channel DV L MOS FET High Speed Power Switching ADE-208-541 1st.
2SJ479 Key Features
- Low on-resistance R DS(on) = 25 mΩ typ
- 4V gate drive devices
- High speed switching
Datasheet Details
| Part number | 2SJ479 |
|---|---|
| Datasheet | 2SJ479_HitachiSemiconductor.pdf |
| File Size | 38.52 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | P-Channel MOSFET |
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