Datasheet Summary
2SJ479(L), 2SJ479(S)
Silicon P Channel DV- L MOS FET High Speed Power Switching
ADE-208-541 1st. Edition Features
- Low on-resistance R DS(on) = 25 mΩ typ.
- 4V gate drive devices.
- High speed switching
Outline
LDPAK
4 4
1 1
1. Gate 2. Drain 3. Source 4. Drain
2SJ479(L),...