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2SJ479L - P-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 25 mΩ typ.
  • 4V gate drive devices.
  • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ479 P-Channel MOSFET
2SJ479S P-Channel MOSFET
2SJ471 P-Channel MOSFET
2SJ409 P-Channel MOSFET
2SJ409L P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ479(L), 2SJ479(S) Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-541 1st. Edition Features • Low on-resistance R DS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.