The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SJ504
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-546 Target specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
TO–220FM
D
G
S
1 2
1. Gate 2. Drain 3. Source
3
2SJ504
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings –60 ±20 –20 –80 –20 –20 34 30 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR*
Pch* Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
2SJ504 Datasheet
