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2SJ504 Datasheet P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st.

Key Features

  • Low on-resistance R DS(on) = 0.042Ω typ.
  • Low drive current.
  • 4V gate drive devices.
  • High speed switching. Outline TO.
  • 220FM D G S 1 2 1. Gate 2. Drain 3. Source 3 2SJ504 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS I.

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