2SJ539 Datasheet PDF (Silicon P-Channel MOSFET) | Download Hitachi Semiconductor 2SJ539

2SJ539 - Silicon P-Channel MOSFET

Features

Low on-resistance R DS(on) = 0.16 Ω typ.
Low drive current.
4 V gete drive devices.
High speed switching Outline TO.
220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
60 ±20.
10.
40.
10 Unit V V A A A A mJ W °C °C Body-drain diode rev.

Datasheet Details

Part number	2SJ539
Manufacturer	Hitachi Semiconductor
File Size	54.47 KB
Description	Silicon P-Channel MOSFET
Datasheet	2SJ539 Datasheet
Additional preview pages of the 2SJ539 datasheet.

📁 Similar Datasheet

2SJ535 - Silicon P-Channel MOSFET (Renesas)

2SJ537 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

2SJ501 - P-Channel MOSFET (Sanyo Semicon Device)

2SJ502 - P-Channel MOSFET (Sanyo Semicon Device)

2SJ503 - P-Channel MOSFET (Sanyo Semicon Device)

2SJ505S - P-Channel MOSFET (VBsemi)

2SJ507 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

2SJ508 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

2SJ509 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

2SJ511 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

Full PDF Text Transcription

Click to expand full text

2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –10 –40 –10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –10 8.5 40 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3.

Published: Mar 30, 2005 |