2SJ539 Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd.

Datasheet Details

Part number	2SJ539
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	54.47 KB
Description	Silicon P-Channel MOSFET
Datasheet	2SJ539_HitachiSemiconductor.pdf

Key Features

Low on-resistance R DS(on) = 0.16 Ω typ.
Low drive current.
4 V gete drive devices.
High speed switching Outline TO.
220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
60 ±20.
10.
40.
10 Unit V V A A A A mJ W °C °C Body-drain diode rev.

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