2SJ539 Overview
2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd.
2SJ539 Key Features
- Low on-resistance R DS(on) = 0.16 Ω typ
- Low drive current
- 4 V gete drive devices
- High speed switching
2SJ539 datasheet by Hitachi Semiconductor (now Renesas).
| Part number | 2SJ539 |
|---|---|
| Datasheet | 2SJ539_HitachiSemiconductor.pdf |
| File Size | 54.47 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon P-Channel MOSFET |
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2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd.
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