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2SJ531
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-646A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
TO–220CFM
D
G 1 2
3
S
1. Gate 2. Drain 3. Source
2SJ531
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –60 ±20 –18 –72 –18
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
–18 27 30 150 –55 to +150
EAR
Pch Tch
Tstg
1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3.
2SJ531 Datasheet
