Datasheet4U.com

2SJ533 Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ533 Silicon P Channel MOS FET High Speed Power Switching ADE-208-649B (Z) 3rd.

2SJ533 datasheet preview

Datasheet Details

Part number	2SJ533
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	53.00 KB
Description	Silicon P-Channel MOSFET
Datasheet	2SJ533_HitachiSemiconductor.pdf

Key Features

Low on-resistance R DS(on) = 0.028 Ω typ.
Low drive current.
4V gate drive devices.
High speed switching. Outline TO.
220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source 2SJ533 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
60 ±20.
30.
120.
30 Unit V V A A A A mJ W °C °C Body-drain diode revers.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
2SJ530	Silicon P-Channel MOSFET
2SJ530L	Silicon P-Channel MOSFET
2SJ530S	Silicon P-Channel MOSFET
2SJ531	Silicon P-Channel MOSFET
2SJ532	Silicon P-Channel MOSFET
2SJ534	Silicon P-Channel MOSFET
2SJ535	Silicon P-Channel MOSFET
2SJ539	Silicon P-Channel MOSFET
2SJ50	P-Channel MOSFET
2SJ504	P-Channel MOSFET

2SJ533 Distributor