Datasheet Summary
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-649B (Z) 3rd. Edition Jun 1998 Features
- Low on-resistance R DS(on) = 0.028 Ω typ.
- Low drive current.
- 4V gate drive devices.
- High speed switching.
Outline
TO- 220CFM
1 2 S
1. Gate 2. Drain 3....