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2SJ535 Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ535 Silicon P Channel MOS FET High Speed Power Switching ADE-208-627B (Z) 3rd.

Key Features

  • Low on-resistance R DS(on) = 0.028 Ω typ.
  • Low drive current.
  • 4V gate drive devices.
  • High speed switching. Outline TO.
  • 220FM D G S 1 2 1. Gate 2. Drain 3. Source 3 2SJ535 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 60 ±20.
  • 30.
  • 120.
  • 30 Unit V V A A A A mJ W °C °C Body-drain diode reverse.

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