2SJ530S Description
High speed power switching REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005.
2SJ530S Key Features
- Low on-resistance RDS (on) = 0.08 Ω typ
- 4 V gate drive devices
- High speed switching
2SJ530S is Silicon P-Channel MOSFET manufactured by Renesas.
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SJ530S | Silicon P-Channel MOSFET | |
Kexin Semiconductor |
2SJ530S | Hight Speed Power Switching |
VBsemi |
2SJ530S | 60V P-Channel MOSFET |
| 2SJ530 | Silicon P-Channel MOSFET | |
| 2SJ530L | Silicon P-Channel MOSFET |
High speed power switching REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005.