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2SJ530S - Silicon P-Channel MOSFET

Download the 2SJ530S datasheet PDF. This datasheet also covers the 2SJ530 variant, as both devices belong to the same silicon p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

High speed power switching REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005

Key Features

  • Low on-resistance RDS (on) = 0.08 Ω typ.
  • 4 V gate drive devices.
  • High speed switching. Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SJ530-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SJ530S
Manufacturer Renesas
File Size 84.99 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet 2SJ530S Datasheet

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Other Datasheets by Renesas

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2SJ530 Silicon P-Channel MOSFET
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2SJ527L P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.5.00 Sep 07, 2005 page 1 of 8 2SJ530(L), 2SJ530(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.