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2SJ530(L), 2SJ530(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0880-0500 (Previous: ADE-208-655C)
Rev.5.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.08 Ω typ.
• 4 V gate drive devices. • High speed switching.
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4 D
123
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Rev.5.00 Sep 07, 2005 page 1 of 8
2SJ530(L), 2SJ530(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
2SJ530 Datasheet
