2SK216 Datasheet | Hitachi Semiconductor

Features - - - - Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 3 1. Gate 2. Source (Flange) 3. Drain 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch- Channel temperature Storage temperature Note: 1. Value at TC = 25°C Tch Tstg Symbol VDSX Ratings 140 160 180 200 ±15 500 500 1.75 30 150 - 45 to +150 Unit V V m A m A W W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK213 2SK214 2SK215 2SK216 Gate to source breakdown voltag Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 1. Pulse test V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss Symbol V(BR)DSX Min 140 160 180 200 ±15 0.2 - 20 - - Typ - - - - - - - 40 90 2.2 Max - - - - - 1.5 2.0 - - - Unit V V V V V V V m S p F p F I G = ±10 µA, VDS = 0 I D = 10 m A, VDS = 10 V - 1 I D = 10 m A, VGD = 0 - 1 I D = 10 m A, VDS = 20 V - 1 I D = 10 m A, VDS = 10 V, f = 1 MHz Test conditions I D = 1 m A, VGS = - 2 V 2SK213, 2SK214, 2SK215, 2SK216 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Drain Current ID (m A) Typical Output Characteristics 500 3.5 TC = 25°C 3.0 400 2.5 300 2.0 200 1.5 100 1.0 VGS = 0.5 V 4 8 16 20 12 Drain to Source Voltage VDS...