| Part number | 2SK2162 |
|---|---|
| Datasheet | 2SK2162_ToshibaSemiconductor.pdf |
| File Size | 120.32 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel MOS Type Field Effect Transistor |
|
|
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 2SK2162 Audio-Frequency Power Amplifier Applications High breakdown voltage: VDSS = 180 V High forward transfer admittance: Ensure that the channel temperature does not exceed 150°C.
| Part Number | Description |
|---|---|
| 2SK210 | N-Channel MOSFET |
| 2SK211 | Silicon N-Channel MOSFET |
| 2SK2145 | Silicon N-Channel MOSFET |
| 2SK2150 | N-Channel MOSFET |
| 2SK2173 | Silicon N Channel MOS Type Field Effect Transistor |
| 2SK2009 | N-Channel MOSFET |
| 2SK2013 | Silicon N Channel MOS Type Field Effect Transistor |
| 2SK2033 | Silicon N-Channel MOS Type FET |
| 2SK2034 | N-Channel MOSFET |
| 2SK2035 | N-Channel MOSFET |
