2SK2162 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Audio-Frequency Power Amplifier Applications - High breakdown voltage: VDSS = 180 V - High forward transfer admittance: |Yfs| = 0.7 S (typ.) - plementary to 2SJ338 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg 180 ±20 1 20 150 - 55~150 V V A W °C °C Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1B...