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2SK2247
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
UPAK 2 1 4
3
D G 1. Gate 2. Drain 3. Source 4. Drain S
2SK2247
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 30 ±20 2 4 2 1 150 –55 to +150
Unit V V A A A W °C °C
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) 3.
2SK2247 Datasheet
