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2SK2408
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, Motor control
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SK2408
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.