2SK2409 Datasheet | NEC

DESCRIPTION The 2SK2409 is N-Channel MOS Field Effect Transistor designed for solenoid, motor, and lamp driver. PACKAGE DIMENSION (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES - Low On-Resistance RDS(on) ≤ 27 mΩ (VGS = 10 V, ID = 20 A) 15.0 ±0.3 RDS(on) ≤ 40 mΩ (VGS = 4 V, ID = 20 A) QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its remended applications. 2.54 0.7 ±0.1 4 ±0.2 13.5 MIN. 12.0 ±0.2 - Low Ciss Ciss = 2040 p F TYP. - Built-in Gate Protection Diode 3 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID(DC) ID(pulse)- 60 ± 20 ± 40 ± 160 2.0 35 150 40 160 V V A A W W ˚C Gate Drain 1 2 3 MP-45F (ISOLATED TO-220) Total Power Dissipation (Ta = 25 ˚C) PT1 Total Power Dissipation (Tc = 25 ˚C) PT2 Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy - PW ≤ 10 µs, Duty Cycle ≤ 1 % Tch Tstg IAS- - EAS- - - 55 to +150 ˚C A m J Body Diode Gate Protection Diode Source - - Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 The information in this document is subject to change without notice. Document No. TC-2489 (O. D. No. TC-8028) Date Published September 1994 P Printed in Japan © ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC Drain to Source On-State Resistance Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Cutoff Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL...