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2SK3000 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA).
  • 4V gate drive devices.
  • Small package (MPAK).
  • Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SK3000 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 (Z) 1st. Edition December 1997 Features • Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA) • 4V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SK3000 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 40 ±10 1.0 4.0 1.0 400 150 –55 to +150 Unit V V A A A mW °C °C 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.