2SK3000 - Silicon N Channel MOS FET

Product Overview

Hitachi Semiconductor

Part number	2SK3000
Manufacturer	Hitachi Semiconductor
File Size	47.50 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK3000 Datasheet
Additional preview pages of the 2SK3000 datasheet.

Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA).
4V gate drive devices.
Small package (MPAK).
Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SK3000 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS.

📁 Similar Datasheet

2SK300 - N-Channel Silicon MOSFET (Sony Corporation)
2SK3003 - MOSFET (Sanken)
2SK3004 - MOSFET (ETC)
2SK3009 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
2SK301 - N-Channel MOSFET (Panasonic Semiconductor)
2SK3012 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
2SK3013 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
2SK3017 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |