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2SK3082 - N-Channel MOSFET

Key Features

  • Low on-resistance RDS(on) = 0.055 Ω typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3082(L),2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 60 ±20 10 40 10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avala.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK3082L N-Channel MOSFET
2SK3082S N-Channel MOSFET
2SK3080 N-Channel MOSFET
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2SK3000 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3082(L),2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 60 ±20 10 40 10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 10 8.5 30 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.