2SK3080 Datasheet N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd.

Datasheet Details

Part number	2SK3080
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	49.77 KB
Description	N-Channel MOSFET
Datasheet	2SK3080_HitachiSemiconductor.pdf

Key Features

Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A).
4V gate drive devices.
High speed switching Outline TO.
220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3080 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 30 ±20 30 120 30 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Ch.

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